page . 1 rev1.0 : aug. 201 1 hy1n60d / HY1N60M features? low on resistance ? fa st switching ? low gate charge & low c rss ? fully chara cterized a vala nche v oltage a nd current ? spe ci ally de sigened f or ac ada pter , battery charger ? in compli a nce with eu rohs 2002/95/ec dire ctive s mechanical information? ca se: t o-252 / it o-251 molded pla stic ? t ermin als : soldera ble per mil-st d-750,method 2026 marking & ordering information n-channel enhancement mode mosfet absolute m axi mum ratings (t c =25 o c unle ss otherwise noted ) 600v / 1.0a 600v , r ds(on) =12 @v gs =10v , i d =0.5a thermal chara cteristics comp any reser ves the right t o improve product design,functions and reliability without notice note : 1. m axi mum dc current li mited by the pa ck age drain gate source 1 2 3 to-252 to-251 1 2 3 g d s 1 2 d g 3 s type marking package packing hy1n60d 1n60d to-252 2500pcs/reel HY1N60M 1n60m to-251 80pcs/tube p a ra m e te r s ym b o l hy 1 n6 0 d hy 1 n6 0 m uni ts d r a i n- s o urc e vo lta g e v d s 6 0 0 v ga te -s o ur c e vo lt a g e v gs + 3 0 v c o nt i nuo us d ra i n c urr e nt t c = 2 5 o c i d 1 1 a p uls e d d ra i n c urr e nt 1 ) i d m 4 4 a ma xi m um p o we r d i s s i p a ti o n d e ra ti ng f a c to r t c = 2 5 o c p d 3 9 0 . 3 1 3 5 .7 0 . 2 9 5 w avalanche energy with single pulse i as =1.5a, vdd=50v, l=48m e a s 5 2 m j op e r a t i ng j unc ti o n a nd s t o r a g e te m p e ra ture ra ng e t j ,t s tg - 5 5 to +1 5 0 o c pa ra m e te r s ym b o l hy1 n6 0 d hy1 n6 0 m uni ts junction-to-case thermal resistance r j c 3 .2 3 .5 o c / w junction-to ambient thermal resistance r j a 5 0 11 0 o c / w gate
page . 2 rev1.0 : aug. 201 1 hy1n60d / HY1N60M ele ctrical chara cteristics ( t c =25 o c unle ss otherwise noted ) note : plus te st : pluse w idth < 300us, duty cycle < 2%. p a ra m e te r s ymb o l te s t c o nd i t i o n mi n. typ . ma x. uni ts s ta ti c d r a i n-s o urc e b re a k d o wn vo lta g e b v d s s v g s = 0 v, i d =2 5 0 ua 6 0 0 - - v ga te thre s ho ld vo lt a g e v gs (t h) v d s = v gs , i d =2 5 0 ua 2 . 0 - 4 .0 v d ra i n-s o urc e on-s ta te re s i s ta nc e r d s (o n) v gs = 10v, i d = 0.5 a - 8.2 12 ze ro ga te vo lta g e d ra i n c urr e nt i d s s v ds =600v, v gs =0v - - 10 ua gate body leakage i gs s v g s =+ 3 0 v, v d s = 0 v - - + 1 0 0 n dynamic to ta l ga t e c ha r g e q g v d s = 4 8 0 v, i d = 1 .0 a v gs =1 0 v - 5 .2 8 . 2 nc ga te -s o urc e c ha rg e q g s - 1 .2 - ga te -d ra i n c ha rg e q g d - 2.4 - turn- on d e la y ti me t d (o n) v dd =300v ,i d = 1.0 a v gs =10v , r g =25 - 9.2 16 ns turn- on ri s e ti m e t r - 6.6 11 turn- off d e la y ti m e t d (o ff ) - 1 4 . 8 2 2 turn- off f a ll ti m e t f - 9 .8 1 6 inp ut c a p a c i ta nc e c i s s v d s =2 5 v, v g s =0 v f= 1 .0 m h z - 1 3 2 2 0 5 p f outp ut c a p a c i ta nc e c o s s - 22 36 re ve rs e tra ns fe r c a p a c i ta nc e c rs s - 0.6 2.2 s o ur c e - d r a i n d i o d e ma x. d i o d e f o rwa r d c ur re nt i s - - - 1 .0 a m a x.p uls e d s o urc e c urre nt i s m - - - 4 .0 a d i o d e f o rwa rd vo lta g e v s d i s = 1 .0 a , v g s = 0 v - - 1 .4 v re ve rs e re c o ve ry ti me t rr v g s = 0 v, i f = 1 . 0 a d i /d t=1 0 0 a /us - 2 1 0 - ns re ve rs e re c o ve ry c ha rg e q rr - 1 .0 - uc
hy1n60d / HY1N60M typical characteristics curves ( t c =25 , unless otherwise noted) 0 0.4 0.8 1.2 1.6 2 0 10 20 30 40 50 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) 6.0v v gs = 20v~ 8.0v 5.0v 7.0v 16 20 on resistance( ? ) 16 20 on resistance( ? ) i d =0.5a 0.1 1 10 2 3 4 5 6 7 8 i d - drain source current (a) v gs - gate-to-source voltage (v) v ds =50v t j = 125 o c 25 o c -55 o c fig.1 output characteristric fig.2 transfer charact eristric 4 8 12 0 1 2 3 4 r ds(on) - on resistance( i d - drain current (a) v gs =20v v gs =10v 0 50 100 150 200 250 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain-to-source voltage (v) ciss f = 1mhz v gs = 0v crss coss 4 8 12 4 5 6 7 8 9 10 r ds(on) - on resistance( v gs - gate-to-source voltage (v) 0 2 4 6 8 10 12 0 1 2 3 4 5 6 v gs - gate-to-source voltage (v) q g - gate charge (nc) i d =1a v ds =480v v ds =300v v ds =120v fig.3 on-resistance vs drain current fig.4 on-resist ance vs gate to source voltage fig.5 capacitance characteristic fig.6 gate charge characteristic rev 1.0 : aug. 2011 page. 3 fig.5 capacitance characteristic fig.6 gate charge characteristic
hy1n60d / HY1N60M typical characteristics curves ( t c =25 , unless otherwise noted) 0.8 0.9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 bv dss - breakdown voltage (normalized) tj - junction temperature (oc) i d = 250 a 1 10 source current (a) v gs = 0v 0.5 0.9 1.3 1.7 2.1 2.5 -50 -25 0 25 50 75 100 125 150 r ds(on) - on-resistance (normalized) t j - junction temperature ( o c) v gs =10 v i d =0.5a fig.7 on-resistance vs junction temperature fig.8 breakdown voltage vs junction temperature 0.01 0.1 1 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c -55 o c fig.9 body diode forward voltage characteristic rev 1.0 : aug. 2011 page. 4
|
